A 250 GHz planar low noise Schottky receiver |
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Authors: | Walid Y Ali-Ahmad William L Bishop Thomas W Crowe and Gabriel M Rebeiz |
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Institution: | (1) NASA/Center for Space Terahertz Technology Electrical Engineering and Computer Science Department, University of Michigan, 48109-2122 Ann Arbor, Michigan;(2) Semi-Conductor Device Laboratory Electrical Engineering Department, University of Virginia, 22901 Charlottesville, Virginia |
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Abstract: | A planar quasi-optical Schottky receiver based on the quasi-integrated horn antenna has been developed and tested over the 230–280GHz bandwidth. The receiver consists of a planar GaAs Schottky diode placed at the feed of a dipole-probe suspended on a thin dielectric membrane in an etched-pyramidal horn cavity. The diode has a 1.2 m anode diameter and a low parasitic capacitance due to the use of an etched surface channel. The antenna-mixer results in a measured DSB conversion loss and noise temperature at 258GHz of 7.2dB±0.5dB and 1310K±70K, respectively, at room temperature. The design is compatible with SIS mixers, and the low cost of fabrication and simplicity makes it ideal for submillimeter-wave imaging arrays requiring a 10–20% bandwidth. |
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