Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

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Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces

Authors:	Rowe Liu Williams Williams

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