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Hole-density dependence of the cyclotron mass of 2D holes in a GaAs(001) quantum well |
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| Authors: | M. N. Khannanov I. V. Kukushkin S. I. Gubarev J. Smet K. von Klitzing W. Wegscheider C. Gerl |
| Affiliation: | 1.Institute of Solid State Physics,Russian Academy of Sciences,Chernogolovka, Moscow region,Russia;2.Max-Planck-Institut für Festk?rperforschung,Stuttgart,Germany;3.Institut für Experimentelle und Angewandte Physik,Universit?t Regensburg,Regensburg,Germany |
| Abstract: | The dependence of the heavy-hole cyclotron mass in GaAs(001) quantum wells on the 2D-hole density has been measured by the optical detection method for resonance microwave by-absorption. A significant increase (almost doubling) has been observed in the cyclotron mass of heavy holes with an increase in the charge carrier density from 1.2 × 1010 cm?2 to 1.3 × 1011 cm?2. |
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