Influence of electron irradiation of the NOVER-1 vacuum resist on its resistance to ionbeam etching |
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Authors: | Yu I Koval’ V T Petrashov |
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Institution: | (1) Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District, Russia |
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Abstract: | The influence of electron irradiation on the resistance of the NOVER-1 resist to ion-beam etching is studied. Etching is carried
out by argon ions with energies between 300 and 2500 eV. It is found that, depending on the energy and angle of incidence
of the ions on the surface of the resist, electron irradiation may either speed up or slow down the NOVER-1 etching. A clear
correlation is observed between the penetration depth of the ions in the resist and the influence of the electron irradiation
on the resistance of the resist to etching. At ion energies higher than 500 eV (ion penetration depth ≳3.5 nm) the resistance
decreases, passes through a minimum at low electron irradiation doses, and returns to the etching rate of the initial resist
at high doses. For glancing etching angles (∼ 70° to the surface normal) and low ion energies (300 eV), i.e., small ion penetration
depths (≲2.5 nm), an electron-irradiated resist is etched more slowly than the initial resist at all the electron irradiation
doses studied. This effect may be used to enhance the resistance of resist structures whose height exceeds their width, which
in this case is determined mostly by the rate of etching of the inclined facets.
Zh. Tekh. Fiz. 68, 140–142 (January 1998) |
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