Resonant tunneling transistor lasers: A new approach to obtain multi-state switching and bistable operation

Bipolar resonant tunneling heterotransistor structures, which can be configured to operate as multi-state or as bistable lasers, are described. Both edge and surface-emitting structures are presented. Computations of various optoelectronics parameters including confinement factor, threshold current density, and cavity modes for a stripe-geometry structure are presented. In addition, simulations of base and collector currents are given for a resonant tunneling transistor to demonstrate the feasibility of lasing in the base region.