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Magnetoresistive measurement of switching behavior in nano-structured magnetic dot arrays
Authors:K. Matsuyama   Y. Nozaki  T. Misumi
Affiliation:

Department of Electronics, Kyushu University 36, Fukuoka 812-8581, Japan

Abstract:In the present study, geometrical and thermal effects in a mesoscopic magnetization reversal process have been studied on a novel nano-structure of magnetic relief dot with magnetoresistive measurements. Only the top layer of a substrate/CoPt(10 nm)/Cu(10 nm)/NiFe(6, 12 nm) film was structured into rectangular dots with various lengths (L) and widths (W) down to 0.2 μm. Coercive fields of NiFe relief dots (W=0.2 μm) systematically decrease with the decrease of L/W, as predicted from demagnetizing factors in single domain particle. About 50% reduction of Hc due to a temperature rise, from 5 to 300 K, demonstrates considerable thermal activation in the magnetization reversal of nano-structured magnetic particles.
Keywords:Magnetoresistance, giant   Magnetization reversal   Thin films, trilayer   Magnetization patterns
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