An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor |
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| Authors: | Nebojsa Jankovic Zhongfu Zhou Steve Batcup Petar Igic |
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| Institution: | 1. Faculty of Electronic Engineering Nis , University of Nis , A. Medvedeva 14, 18000, Nis, Serbia and Montenegro janko@elfak.ni.ac.yu;3. Electronics Systems Design Centre, School of Engineering, Swansea University , Singleton Park, SA2 8PP, Swansea, Wales, Great Britain |
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| Abstract: | An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article. The one-dimensional physical model of low-gain wide-base BJT is employed based on the equivalent non-linear lossy transmission line, whereas a SPICE Level 3 model is used for the diffused MOST part. The influence of voltage dependent drain-to-gate overlapping capacitance and the conductivity modulated base (drain) ohmic resistance are modelled separately. The main advantages of novel PT IGBT model are a small set of model parameters, an easy implementation in SPICE simulator and the high accuracy confirmed by comparing the simulation results with the electrical measurements of test power circuit. |
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| Keywords: | IEBT modelling sub-circuit SPICE physical |
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