Effect of photoheating of electrons on the properties of compensated semiconductors

It is shown that even a small contribution to the total density of the high-energy tail in the electron distribution during impurity photoexcitation can change noticeably such properties of a compensated semiconductor as its Hall mobility and, in particular, the capture coefficient at repulsing Coulomb centers.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 13–16, February, 1984.The author is grateful to V. L. Bonch-Bruevich for discussion.