Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates |
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| Authors: | H.N. Lee S. Senz A. Visinoiu A. Pignolet D. Hesse U. Gösele |
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| Affiliation: | (1) Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, 60451-970 Fortaleza, Ceará, Brazil; |
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| Abstract: | Epitaxial SrBi2Ta2O9 (SBT) thin films with well-defined (116) orientation have been grown by pulsed laser deposition on Si(100) substrates covered with an yttria-stabilized ZrO2 (YSZ) buffer layer and an epitaxial layer of electrically conductive SrRuO3. Studies on the in-plane crystallographic relations between SrRuO3 and YSZ revealed a rectangle-on-cube epitaxy with respect to the substrate. X-ray diffraction pole figure measurements revealed well-defined orientation relations, viz. SBT(116)SrRuO3(110)YSZ(100)Si(100), SBT[110]SrRuO3[001], and SrRuO3[111]YSZ[110]Si[110]. |
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