Electron focusing in backscattering from single-crystal Si(100)

Diffraction patterns produced by quasi-elastically backscattered electrons focused in a thin single-crystal Si(100)2×1 near-surface layer have been studied. The measurements performed in the 0.6–2-keV range are compared with calculations made in the single-scattering cluster approximation. This model is shown to describe adequately the experiment. An analysis is made of the relation among the diffraction patterns observed for different silicon faces, and of the effect of the primary-electron beam orientation. The relations governing the focusing of quasi-elastically backscattered electrons escaping from the crystal along the main crystallographic directions have been established. The various aspects of the effect for backscattered electrons undergoing inelastic interaction with the electron subsystem of the crystal have been investigated. Fiz. Tverd. Tela (St. Petersburg) 40, 1364–1369 (July 1998)