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Paramagnetic defects induced by ion implantation in oxide glasses
Authors:L D Bogomolova  V A Jachkin  S A Prushinsky  S A Dmitriev  S V Stefanovsky  Yu G Teplyakov  F Caccavale  E Cattaruzza  R Bertoncello  F Trivillin
Abstract:Radiation defects induced by ion bombardment of multicomponent oxide glasses of five compositions (phosphates and borosilicates) were investigated by means of electron paramagnetic resonance (EPR). The samples were implanted with N+, O+, Ar+, Mn+, Cu+ and Pb+ ions at energy E=150 keV at three different doses between 3×1015 and 1017 ions/cm2. The broad anisotropic EPR spectra with principal g-values answering the relationship gz>gy>gx˜ge (ge is g-factor of free electron) were observed for the samples of all five compositions. The g-values depend on glass composition. For example, gz ranges from 2.016 to 2.057. Computer simulation shows that the spectra of many samples are superpositions of two spectra with g-values answering the mentioned relationship. These spectra are attributed to molecular O2 ions weakly coupled with glass network. In some samples narrow almost symmetric lines with g=2.0025±0.0005 were observed. The possible radiation defects responsible for this signal are discussed.
Keywords:Glass  Oxides  Defects  Paramagnetism  Ion implantation  Radiation damage  Composition  Electron spin resonance spectroscopy  Anisotropy  Computer simulation  Paramagnetic defects  Multicomponent oxide glass
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