Diffusion of gold in silicon studied by means of neutron-activation analysis and spreading-resistance measurements |
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Authors: | N. A. Stolwijk B. Schuster J. Hölzl |
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Affiliation: | (1) Max-Planck-Institut für Metallforschung, Institut für Physik, Heisenbergstrasse 1, Fed. Rep. Germany;(2) Institut für Theoretische und Angewandte Physik, Universität Stuttgart, Pfaffenwaldring 57, D-7000 Stuttgart, Fed. Rep. Germany |
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Abstract: | In- and out-diffusion of gold in silicon were investigated with the aid of a neutronactivation analysis in combination with mechanical sectioning or by the spreadingresistance technique. In-diffusion profiles in the range 1371–1073 K show that Au diffuses in Si mainly via the so-called kick-out mechanism. From the Au diffusion and solubility measurements the interstitialcy contributionDISD to the Si self-diffusion coefficient was determined, which shows that the self-diffusion occurs to a considerable extent via selfinterstitials. Out-diffusion profiles at 1173 K were measured on wafers homogeneously supersaturated with Au. The observed decrease of the electrical activity of Au in the bulk indicates that during the out-diffusion anneal the majority of Au atoms originally dissolved substitutionally changes its configuration. |
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Keywords: | 61.70 66.30 85.3085.30 |
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