Investigation of the optical properties of In2Se3xTe3(1−x) single crystals

In [1] it was shown that when In₂Te₃ interacts with In₂Se₃ in samples which are mainly indium telluride, substitutional solid solutions having the zinc blende structure are formed in the concentration range 0–40 mol.% In₂Se₃ (0 x 0.4). The solubility of the low temperature hexagonal modification-In₂Se₃ did not exceed 2 mol.%; formation of solid solutions having the medium temperature hexagonal modification of-In₂Se₃ was observed for the interval 0.9 x 0.95. These published data [2, 3] are concerned with electrical properties of the crystals. In this paper the results of an investigation of the optical properties of In₂Se_3xTe_3(1–x) single crystals for temperatures between 300 and 77°K are presented. Crystals suitable for optical measurements were obtained by a modified Bridgman method, which included vibarational mixing. All the samples were n-type. The resistivity varied from 10⁶ to 10⁴ ohm · cm in the course of the transition from-In₂Te₃ to the solid solutions (0 x 0.4).Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 65–68, May, 1972.