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Preparation of boron-doped semiconducting diamond films using BF3 and the electrochemical behavior of the semiconducting diamond electrodes |
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| Authors: | Fujio Okino Yukio Kawaguchi Kunitake Momota Toshihiro Ando Mamoru Yoshimoto |
| Institution: | a Faculty of Textile Science and Technology, Shinshu University, 3-15-1 Tokida, Ueda 386-8567, Japan b Department of Research and Development, Morita Chemical Industries Company Limited, Higashimikuni 3-12-10, Yodogawa-ku, Osaka 532-0002, Japan c Department of Applied Chemistry, Faculty of Engineering, Toyo University, 2100 Kujirai, Kawagoe 350-8585, Japan d National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan e Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan f Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502, Japan |
| Abstract: | Boron-doped semiconducting diamond films were prepared using BF3 by microwave plasma assisted chemical vapor deposition. B-doping was confirmed by SIMS and Raman spectroscopic measurements and the B-doping levels were estimated. Electrochemical behaviors of boron-doped diamond thin-film electrodes prepared using B2H6 and BF3 were studied by measuring cyclic voltammograms for anodic oxidation of 1,4-difluorobenzene in the liquid electrolyte, neat Et4NF·4HF. The results of the direct thermal interaction of elemental fluorine with hydrogenated and oxidized diamond surfaces are also presented. |
| Keywords: | Diamond Fluorination BF3 Boron-doping SIMS Cyclic voltammetry Raman spectroscopy |
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