Oxygen codoping of ZnS:Tb,F electroluminescent thin film |
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| Authors: | J.P Kim M Puga-Lambers P.H Holloway |
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| Affiliation: | a Department of Materials Science and Engineering, University of Florida, 202 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611-6400, USAb MICROFABRITECH, University of Florida, Gainesville, FL 32611-6400, USA |
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| Abstract: | Thin films of ZnS:Tb,F were sputter deposited from a ZnS:TbF3 target in an oxygen-argon ambient. The highest electroluminescent brightness (82 cd/m2 at 60 Hz) was measured from ZnS:Tb,F films with a 3.6 at% oxygen concentration. Oxygen concentrations above or below this concentration resulted in sharp decreases in brightness (56 cd/m2 at 2.2 at% oxygen, and 42 cd/m2 at 8.1 at% oxygen). The brightness improvement by oxygen codoping between 0 and 3.6 at% results from increased conduction charge with increasing oxygen concentrations. The brightness decrease for oxygen >3.6 at% is attributed to decreases of both excitation and radiative efficiencies. Improved electroluminescent brightness from oxygen codoping during sputter deposition of ZnS:Tb,F films was equivalent to the improvement observed in films deposited from a ZnS:TbOF target. |
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| Keywords: | ZnS:TbOF |
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