1. Department de Física Aplicada-IDF, Universitat Politècnica de València, Camí de Vera s/n, 46022, València, Spain 2. Centro de Fisica, Universidade do Minho, Braga, 4710-057, Portugal
Abstract:
Cu-doped ZnO (ZnO:Cu) thin films and ZnO/ZnO:Cu homojunction devices were electrodeposited on conductive glass substrates in a non-aqueous electrolyte containing Cu and Zn salts. The Cu content of the films is proportional to the Cu/Zn precursor ratio in the deposition electrolyte. ZnO:Cu was found to be of a hexagonal wurtzite structure with (002) preferred orientation. A transition from n-type to p-type was observed for ZnO:Cu films with a Cu/Zn ratio higher than 2% as inferred from the change in the direction of the photocurrent. The rectifying characteristics shown by homojunction devices further confirm the p-type conductivity of ZnO:Cu layers.