InAs nanostructures on InP (001) substrate with the insertion of a superthin AlAs layer |
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| Authors: | Lü Xiao-jing Wu Ju Xu Bo Zeng Yi-ping Wang Biaoqiang and Wang Zhan-guo |
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| Institution: | (1) Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China |
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| Abstract: | An AlAs layer of two or three monolayers was inserted beneath the strained InAs layer in the fabrication of InAs nanostructure
on the In0.53Ga0.47As and In0.52Al0.48As buffer layer lattice-matched to InP(001) substrate using molecular beam epitaxy. The effects of AlAs insertion on the InAs
nanostructures were investigated and discussed.
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| Keywords: | nanostructures MBE InAs/InP(001) |
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