Photoconductivity of gallium arsenide irradiated with 5 MeV protons

Several levels which develop in GaAs before and after proton irradiation were derived from the photoconductivity spectra. It is assumed that the majority of the levels which are observed after irradiation are related to uncontrollable impurities or to impurities which are activated during irradiation. The GaAs Cu samples were used to show that it is possible to activate admixtures by proton irradiation. It was established that the absolute photoconductivity is reduced during irradiation by the development of recombination centers. The average activation energy of these centers was estimated at 0.06 eV. Lattice defects are the recombination centers.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 34–40, February, 1972.