| CMOS带隙电压基准的误差及其改进 |
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| 引用本文： | 陈浩琼,高清运,秦世才.CMOS带隙电压基准的误差及其改进[J].固体电子学研究与进展,2005,25(4):531-535. |
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| 作者姓名： | 陈浩琼 高清运 秦世才 |
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| 作者单位： | 南开大学微电子系,天津,300071;南开大学微电子系,天津,300071;南开大学微电子系,天津,300071 |
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| 基金项目： | 本课题得到天津科技攻关重点项目（编号：033187111）和南开大学与天津中晶微电子公司合作项目的资助 |
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| 摘 要： | 分析了CMOS带隙基准电压值的误差,给出了定量的数学表达式和相应的改进方法。在此理论指导下,用0.25μmCMOS工艺设计了一个带隙基准源,并制出芯片。基准电压的设计值为1.2V,实测结果表明,在不使用修正技术的情况下,基准电压值的均方差达3mV,温度系数(从-40°C～100°C)为20ppm/°C,电源抑制比(从2～3.3V)80μV/V,验证了理论分析的正确性。
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| 关 键 词： | 互补金属氧化物半导体 带隙基准 误差源 均方差 |
| 文章编号： | 1000-3819（2005）04-531-05 |
| 收稿时间： | 2004-11-15 |
| 修稿时间： | 2005-01-25 |
Error Sources of CMOS Bandgap Reference and Their Improvement |
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| CHEN Haoqiong,GAO Qingyun,QIN Shicai.Error Sources of CMOS Bandgap Reference and Their Improvement[J].Research & Progress of Solid State Electronics,2005,25(4):531-535. |
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| Authors: | CHEN Haoqiong GAO Qingyun QIN Shicai |
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| Institution: | Microelectronics Department, Nankai University, Tianjin , 300071, CHN |
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| Abstract: | This paper analyses all the error sources in bandgap voltage reference and presents precise mathematical expression and the corresponding improvment method. According to the analysis, a new bandgap voltage reference based on 0.25 μm CMOS technology is designed and fabricated. The design value is 1.2 V. Testing shows that the standard deviation of the reference voltage is 3 mV, the temperature coefficient is 20 ppm/ °C over -40~100 °C and the supply rejection ratio is 80 μV/V for 2 V to 3.3 V supply. These results prove the theory. |
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| Keywords: | CMOS bandgap reference error sources standard deviation |
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