XeCl excimer laser assisted CBE growth of GaAs |
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| Authors: | T Fareell J V Armstrong T B Joyce T J Bullough P Kightley P J Goodhew |
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| Institution: | Department of Materials Science and Engineering, The University of Liverpool, Liverpool L69 3BX, UK |
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| Abstract: | The effect of 12 ns, 308 nm (XeCl) excimer laser pulses on the CBE growth rate of GaAs, at temperatures below the maximum non-laser assisted growth rate, Gmax, has been studied as a function of laser fluence and repetition frequency. There is a threshold fluence for growth rate enhancement, above which the growth rate is dependent on repetition frequency, being restored to Gmax at 20 Hz. The growth rate in the laser spot is measured by dynamic optical reflectivity (DOR). |
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