Synthesis of Cr-based mixed oxides by reactive ion beam mixing of Cr/X interfaces (X=Al or Si)

The 3 keV O₂⁺\mathrm{O}_{2}^{+} reactive ion beam mixing of Cr/X interfaces (X=Al or Si) has been used to synthesize Cr-based mixed oxide thin films. The kinetics of growth, composition, and electronic structure of those films has been studied using X-ray photoelectron spectroscopy, Auger electron spectroscopy, ultraviolet photoelectron spectroscopy, and factor analysis. Initially, for low ion doses, Cr₂O₃ species are formed. Later, with increasing the ion dose, Cr₂O₃ species are first transformed into Cr³⁺–O–X species, and subsequently, those Cr³⁺–O–X species are transformed into Cr⁶⁺–O–X species. This sequential transformation, Cr₂O₃→Cr³⁺–O–X→Cr⁶⁺–O–X, is accompanied by a slight increase of the oxygen concentration and a decrease of the Cr/X ratio in the films formed leading to the synthesis of custom designed Cr-based mixed oxides. The changes observed in the valence band and Auger parameters further support the formation of Cr–X mixed oxide species. Angle resolved X-ray photoelectron spectroscopy shows that for low ion doses, when only Cr₂O₃ and Cr³⁺–O–X species coexist, Cr³⁺–O–X species are located nearer the surface than Cr₂O₃ species, whereas for higher ion doses, when only Cr³⁺–O–X and Cr⁶⁺–O–X species coexist, the Cr⁶⁺–O–X species are those located nearer the surface.