Nanodiamond infiltration into porous silicon through etching of solid carbon produced at different graphitization temperatures |
| |
Authors: | C R B Miranda M R Baldan A F Beloto N G Ferreira |
| |
Institution: | 1.Centro de Ciências do Sistema Terrestre—CCST,Instituto Nacional de Pesquisas Espaciais—INPE, Centro de Ciências do Sistema Terrestre—CCST,S?o José dos Campos,Brazil;2.Centro de Tecnologias Espaciais,CTE/INPE,S?o José dos Campos,Brazil |
| |
Abstract: | Nanocrystalline diamond (NCD) was grown on the porous silicon (PS) substrate using Reticulated Vitreous Carbon (RVC) as an
additional solid carbon source. RVC was produced at different heat treatment temperatures of 1300, 1500, and 2000 °C, resulting
in samples with different turbostratic carbon organizations. The PS substrate was produced by an electrochemical method. NCD
film was obtained by the chemical vapor infiltration/deposition process where a RVC piece was positioned just below the PS
substrate. The PS and NCD samples were characterized by Field Emission Gun-Scanning Electron Microscopy (FEG-SEM). NCD films
presented faceted nanograins with uniform surface texture covering all the pores resulting in an apparent micro honeycomb
structure. Raman’s spectra showed the D and G bands, as well as, the typical two shoulders at 1,150 and 1,490 cm−1 attributed to NCD. X-ray diffraction analyses showed the predominant (111) diamond orientation as well as the (220) and (311)
peaks. The structural organization and the heteroatom presence on the RVC surface, analyzed from X-ray photoelectron spectroscopy,
showed their significant influence on the NCD growth process. The hydrogen etching released, from RVC surface, associated
to carbon and/or oxygen/nitrogen amounts led to different contributions for NCD growth. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|