Investigation of a 4H-SiC metal-insulation-semiconductor structure with an Al2O3/SiO2 stacked dielectric |
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Authors: | Tang Xiao-Yan Song Qing-Wen Zhang Yu-Ming Zhang Yi-Men Jia Ren-Xu L Hong-Liang and Wang Yue-Hu |
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Affiliation: | School Microelectronics,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China |
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Abstract: | Atomic layer deposited(ALD) Al2O3 /dry-oxidized ultrathin SiO2 films as a high-k gate dielectric grown on 8°off-axis 4H-SiC(0001) epitaxial wafers are investigated in this paper.The metal-insulation-semiconductor(MIS) capacitors,respectively with different gate dielectric stacks(Al2O3/SiO2,Al2O3,and SiO2) are fabricated and compared with each other.The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field(≥12 MV/cm) comparable to SiO2,and a relatively low gate leakage current of1×10-7A/cm2 at an electric field of4 MV/cm comparable to Al2O3.The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage,indicating a less effective charge and slow-trap density near the interface. |
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Keywords: | 4H-SiC Al2O3 high-k dielectric |
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