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Broadband light emitting from multilayer-stacked InAs/GaAs quantum dots |
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| Authors: | Liu Ning ab Jin Peng a and Wang Zhan-Guo |
| Affiliation: | a) a) Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China b) Electricity Examination Department,Patent Examination Cooperation Center of the Patent Office,State Intellectual Property Office,Beijing 100190,China |
| Abstract: | We report the effect of the GaAs spacer layer thickness on the photoluminescence(PL) spectral bandwidth of InAs/GaAs self-assembled quantum dots(QDs).A PL spectral bandwidth of 158 nm is achieved with a five-layer stack of InAs QDs which has a 11-nm thick GaAs spacer layer.We investigate the optical and the structural properties of the multilayer-stacked InAs/GaAs QDs with different GaAs spacer layer thicknesses.The results show that the spacer thickness is a key parameter affecting the multi-stacked InAs/GaAs QDs for wide-spectrum emission. |
| Keywords: | quantum dots broudband spectrum superluminescent diode |
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