Improvement of doping efficiency in Mg-Al0.14Ga0.86N/GaN superlattices with AlN interlayer by suppressing donor-like defects |
| |
Authors: | Liu Ning-Yang Liu Lei Wang Lei Yang Wei Li Ding Li Lei Cao Wen-Yu Lu Ci-Mang Wan Cheng-Hao Chen Wei-Hua and Hu Xiao-Dong |
| |
Affiliation: | State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China |
| |
Abstract: | We investigate the mechanism for the improvement of p-type doping efficiency in Mg-Al0.14Ga0.86N/GaN superlattices(SLs).It is shown that the hole concentration of SLs increases by nearly an order of magnitude,from 1.1×1017 to 9.3×1017cm-3,when an AlN interlayer is inserted to modulate the strains.Schro¨dinger-Poisson self-consistent calculations suggest that such an increase could be attributed to the reduction of donor-like defects caused by the strain modulation induced by the AlN interlayer.Additionally,the donor-acceptor pair emission exhibits a remarkable decrease in intensity of the cathodoluminescence spectrum for SLs with an AlN interlayer.This supports the theoretical calculations and indicates that the strain modulation of SLs could be beneficial to the donor-like defect suppression as well as the p-type doping efficiency improvement. |
| |
Keywords: | superlattice doping efficiency strain modulation nitrogen vacancy |
本文献已被 CNKI 维普 等数据库收录! |