| Bright red electroluminescent devices based on a soluble lanthanide complex Eu(DBM)_3(phen) |
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| 作者姓名： | 马东阁 王岱珂 洪志勇 赵晓江 景遐斌 王佛松 李斌 张洪杰 王淑彬 |
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| 作者单位： | Changchun Institute of Applied Chemistry，Chinese Academy of Sciences，Changchun，Jilin 130022，China，Changchun Institute of Applied Chemistry，Chinese Academy of Sciences，Changchun，Jilin 130022，China，Changchun Institute of Applied Chemistry，Chinese Academy of Sciences，Changchun，Jilin 130022，China，Changchun Institute of Applied Chemistry，Chinese Academy of Sciences，Changchun，Jilin 130022，China，Changchun Institute of Applied Chemistry，Chinese Academy of Sciences，Changchun，Jilin 130022，China，Changchun Institute of Applied Chemistry，Chinese Academy of Sciences，Changchun，Jilin 130022，China，Laboratory of Rare Earth Chemistry and Physics，Changchun Institute of Applied Chemistry，Chinese Academy of Sciences，Changchun，Jilin 130022，China，Laboratory of Rare Earth Chemistry and Physics，Changchun Institute of Applied Chemistry，Chinese Academy of Sciences，Changchun，Jilin 130022，China，Laboratory of Rare Earth Chemistry and Physics，Changchun Institute of Applied Chemistry，Chinese Academy of Sciences，Changchun，Jilin 130022，China |
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| 基金项目： | Project supported by the National Committee of Sciences and Technology of China ((863-715-002-01307), CAS(KJ951-A1-501-01)), the National Natural Science Foundation of China and the Laboratory of Rare Earth Chemistry and Physics, Changchun Institute of A |
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| 摘 要： | Electroluminescent devices with PVK film doped with Eu(DBM)3(phen) and PBD were fabricated. The device structure of glass substrate/indium-tin-oxide/PPV/PVK:Eu(DBM)3-(phen):PBD/Alq3/Al was employed. The emissive layer was formed by spin-casting method. A sharply red electroluminescence with a maximum luminance of 114.4 cd/m2 was achieved at 42 V.
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Bright red electroluminescent devices based on a soluble lanthanide complex Eu(DBM)_3(phen) |
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| MA,Dong-Ge WANG,Dai-Ke HONG,Zhi-YongZHAO,Xiao-Jiang JING,Xia-Bin WANG,Fo-SongChangchun Institute of Applied Chemistry,Chinese Academy of Sciences,Changchun,Jilin ,ChinaLI,Bin ZHANG,Hong-Jie WANG,Shu-BinLaboratory of Rare Earth Chemistry and Physics,Changchun Institute of Applied Chemistry,Chinese Academy of Sciences,Changchun,Jilin ,China.Bright red electroluminescent devices based on a soluble lanthanide complex Eu(DBM)_3(phen)[J].Chinese Journal of Chemistry,1998,16(1):1-6. |
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| Authors: | MA Dong-Ge WANG Dai-Ke HONG Zhi-YongZHAO Xiao-Jiang JING Xia-Bin WANG Fo-SongChangchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun Jilin ChinaLI Bin ZHANG Hong-Jie WANG Shu-BinLaboratory of Rare Earth Chemistry and Physics Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun Jilin China |
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| Institution: | MA,Dong-Ge WANG,Dai-Ke HONG,Zhi-YongZHAO,Xiao-Jiang JING,Xia-Bin WANG,Fo-SongChangchun Institute of Applied Chemistry,Chinese Academy of Sciences,Changchun,Jilin 130022,ChinaLI,Bin ZHANG,Hong-Jie WANG,Shu-BinLaboratory of Rare Earth Chemistry and Physics,Changchun Institute of Applied Chemistry,Chinese Academy of Sciences,Changchun,Jilin 130022,China |
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| Abstract: | Electroluminescent devices with PVK film doped with Eu(DBM)3(phen) and PBD were fabricated. The device structure of glass substrate/indium-tin-oxide/PPV/PVK:Eu(DBM)3-(phen):PBD/Alq3/Al was employed. The emissive layer was formed by spin-casting method. A sharply red electroluminescence with a maximum luminance of 114.4 cd/m2 was achieved at 42 V. |
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| Keywords: | Electroluminescence europium complex red emission doping |
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