A review on quantum well structures in photonic devices for enhanced speed and span of the transmission network |
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Authors: | Meenakshi Dhingra Ajay Shankar and B B Tiwari |
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Institution: | (1) University of Delaware, Newark, DE, USA; |
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Abstract: | Quantum well devices feature heterostructures of very thin epitaxial layers of group III-V and II-VI semiconductor materials.
Quantum well devices are integrated monolithically with various optoelectronics devices to provide photonic integrated circuits.
The representative structure could be realized with GaAs wells with GaAlAs barriers for wavelengths around 0.9 μm and InGaAsP
are used for longer wavelengths. Together with quantum well, superlattice structure is another popular design for InGaAs Avalanche
Photo Diode (APD). Quantum well structures find their applications in improved lasers, superlattice for photodiodes, modulators
and switches. Consequences of quantum well theory are available today in terms of quantum wires and quantum dots. Upon the
application of the normal electric field to quantum well structures, exciton pairs becomes more and more confined and the
sharp exciton absorption peaks are observed. The effect is termed as “Quantum Confined Stark Effect”. The electro-absorption effect is approximately 50 times larger in multiple quantum well structures than it is in bulk semiconductors.
Another electro-absorption effect known as “Franz Keldysh Effect” has been employed in monolithic waveguide detector. These effects lead to electro-absorption lasers (EAL) as well as electro-absorption
laser modulators (EML). |
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