| n型Ge基Ba_8Ga_(16-x)Zn_xGe_(30) I-型笼合物的制备及电传输特性 |
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| 引用本文： | 邓书康,申兰先,郝瑞亭,田晶,杨培志. n型Ge基Ba_8Ga_(16-x)Zn_xGe_(30) I-型笼合物的制备及电传输特性[J]. 人工晶体学报, 2010, 39(1): 237-241 |
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| 作者姓名： | 邓书康 申兰先 郝瑞亭 田晶 杨培志 |
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| 作者单位： | 云南师范大学教育部可再生能源材料先进技术与制备重点实验室,昆明,650092 |
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| 基金项目： | 国家自然科学青年基金(No.50902119);;云南省社会发展基础研究项目(No.2008CD114,2007E197M) |
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| 摘 要： | 用熔融法结合放电等离子体烧结技术,采用Zn掺杂制备了具有半导体传导特性的n型Ba_8Ga_(16-x)Zn_xGe_(30) I-型笼合物,研究了Zn部分置换Ga对化合物电传输特性的影响.研究表明所制备的化合物为单相的具有空间群Pm3-n的I-型笼合物.Zn掺杂前对应化合物表现为金属传导特性,Zn掺杂后对应化合物表现为典型的杂质半导体传导特性.室温下,随Zn掺杂量的增加,化合物的载流子浓度和载流子有效质量逐渐降低;Zn掺杂对室温载流子迁移率无明显影响.在300～900 K温度范围内,随Zn掺杂量的增加对应化合物的电导率逐渐降低,Seebeck系数逐渐增加.Zn掺杂后对应化合物的功率因子与掺杂前相比有所降低,且达到最大值的温度都向低温方向偏移.
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| 关 键 词： | I-型笼合物 热电材料 电传输特性, |
Synthesis and Electrical Transport Properties of n-type Ge-based Ba_8Ga_(16-x)Zn_xGe_(30) Type-I Clathrates |
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| DENG Shu-kang,SHEN Lan-xian,HAO Rui-ting,TIAN Jing,YANG Pei-zhi. Synthesis and Electrical Transport Properties of n-type Ge-based Ba_8Ga_(16-x)Zn_xGe_(30) Type-I Clathrates[J]. Journal of Synthetic Crystals, 2010, 39(1): 237-241 |
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| Authors: | DENG Shu-kang SHEN Lan-xian HAO Rui-ting TIAN Jing YANG Pei-zhi |
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| Affiliation: | Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology of Ministry of Education;Yunnan Normal University;Kunming 650092;China |
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| Abstract: | n-type Ba8Ga16-xZnxGe30 type-I clathrates with conduction characteristic of semiconductor were prepared by combining melting method with spark plasma sintering (SPS) method.Effects of Zn partial substitute for Ga on the electrical transport properties were investigated.The results reveal that the obtained samples possess of single phase of type-I clathrates with space group pm3-n.The compound without Zn doping behaves metal conduction characteristic,but for Zn-doped samples show conduction characteristic of... |
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| Keywords: | type-I clathrate thermoelectric material electrical transport property |
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