Resonant-tunneling structure of quantum wells in the p-i-n photovoltaic element |
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Authors: | M P Telenkov Yu A Mityagin |
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Institution: | 1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia 2. National University of Science and Technology “MISIS”, Leninskii pr. 4, Moscow, 119049, Russia
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Abstract: | The method for efficient separation of photoexcited carriers, based on the resonant tunneling phenomenon in the quantum well structure placed into the i-region of the p-i-n photovoltaic element, is proposed. The parameters of quantum well structures based on the GaAs/Ga1?x In x As system, implementing the mode of sequential resonant tunneling in the electric field of the GaAs p-i-n junction, is calculated. A microscopic model of resonant-tunneling transport in such structures is constructed, and the kinetic tunneling times are calculated depending on well and barrier parameters. The possibility of achieving sufficiently short (<~10 ps) tunneling times and, hence, quite efficient removal of photoelectrons and photoholes from quantum wells at a proper choice of barrier powers is shown. |
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