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Laser-produced plasma EUV source based on tin-rich, thin-layer?targets |
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| Authors: | R Rakowski J Miko?ajczyk A Bartnik H Fiedorowicz F de Gaufridy de Dortan R Jarocki J Kostecki M Szczurek P Wachulak |
| Institution: | 1. Institute of Optoelectronics, Military University of Technology, 2 Gen. Sylwestra Kaliskiego St., 00-908, Warsaw, Poland 2. Department of Physics, Lund University, Lund, Sweden 3. Service des Photons, Atomes et Molecules, CEA-Saclay, 91191, Gif-sur-Yvette Cedex, France 4. Department of Electrical and Computer Engineering, Colorado State University, 1320 Campus Delivery, Fort Collins, CO, 80523-1320, USA |
| Abstract: | In this paper a new approach to a laser-produced plasma EUV source based on a tin target is presented. A?thin layer of pure tin and composite layers consisting of Sn with Si, SiO and LiF are investigated. The target composed of several thin layers produces less debris than the other targets and provides a conversion efficiency (CE) in the 13.5-nm±1% band at least comparable to the CE for the pure tin slab target. The largest CE was observed for the target composed of a mixture of Sn and LiF, due to the fact that lithium, similarly to tin, is a strong emitter at 13.5?nm. |
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