Diamagnetic enhancement in amorphous semiconductors |
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| Institution: | 1. Department of Physics, Berhampur University, Berhamour 760007, Orissa, India;2. Department of Physics, University of Rhode Island, Kingston, RI 02881, USA |
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| Abstract: | We analyse the diamagnetic susceptibility χ of a model two-dimensional semiconductor both in crystalline and amorphous phases using a linear combination of hybrids model. We show that the large diamagnetic enhancement in amorphous Si and Ge is due to the reduction of the Van Vleck type paramagnetic term. |
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