Single-electron spin-dependent transport in split-gate structures containing self-assembled quantum dots

Study of split-gate structures, in which self-assembled InAs quantum dots (QDs) are located near the region of 2D electron gas, has revealed Coulomb oscillations in the dependence of the tunnel current through a limited number of InAs QDs in a channel on the gate voltage, which correspond to the excited states of QDs with opposite spins. The Coulomb oscillations of the current were observed up to a temperature of ～20 K. The Coulomb energy ΔE _C was found to be 12.5 meV, a value corresponding to the theoretical estimates for p states of QDs in our experimental structures.