| 单晶Si太阳能电池工艺仿真与性能分析 |
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| 引用本文： | 孙玲,罗向东,常志强.单晶Si太阳能电池工艺仿真与性能分析[J].半导体技术,2010,35(3):209-212. |
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| 作者姓名： | 孙玲 罗向东 常志强 |
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| 作者单位： | 南通大学江苏省专用集成电路设计重点实验室,江苏,南通,226019;矽谷科技,上海,200040 |
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| 基金项目： | 江苏省高校自然科学重大基础研究项目(08KJA510002);;南通市科技项目(K2008016) |
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| 摘 要： | 日益成熟的集成电路工艺与器件计算机辅助设计工具有助于缩短半导体工艺和器件的开发周期、降低开发成本,因而越来越被广泛应用。基于TCAD工具,给出了一种简单pn结太阳能电池的工艺过程,详细介绍了其短路电流、开路电压、填充因子以及转换效率等性能参数的仿真方法,并以p型衬底上单晶Si太阳能电池为例,分别讨论了其伏安特性、光谱特性、照度特性和温度特性。与实验方法相比较,基于TCAD的辅助设计方法对加快国内太阳能电池工艺的技术发展将起到积极的作用。
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| 关 键 词： | 计算机辅助设计 硅太阳能电池 pn结 伏安特性 |
Process Simulation and Performance Analysis for Monocrystalline Si Solar Cell |
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| Sun Ling,Luo Xiangdong,Chang Zhiqiang.Process Simulation and Performance Analysis for Monocrystalline Si Solar Cell[J].Semiconductor Technology,2010,35(3):209-212. |
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| Authors: | Sun Ling Luo Xiangdong Chang Zhiqiang |
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| Institution: | 1.Jiangsu Key Lab.of ASIC Design;Nantong University;Nantong 226019;China;2.Silvaco International;Shanghai 200040;China |
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| Abstract: | The simulation tools for technology computer aided design could be useful for time saving and cost consumption and has been more and more widely used.Based on TCAD tools,the simple processes for a pn junction solar cell were presented,the simulation methods for solar cell's parameters,such as short-circuit current,open-circuit voltage,filling factor,as well as conversion efficiency,were discussed.And the I-V curve,spectrum,illumination and temperature characteristics of monocrystalline silicon with p-type s... |
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| Keywords: | computer adied design silicon solar cell pn junction I-V curve |
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