Vacuum lithography—A completely dry lithography using plasma processing |
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Authors: | Junji Tamano Shuzo Hattori Shinzo Morita Katsumi Yoneda |
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Institution: | (1) Department of Electronics, Nagoya University, Chikusa-ku, 464 Nagoya, Japan;(2) Department of Electrical Engineering, Meijo University, Tenpaku-ku, 468 Nagoya, Japan |
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Abstract: | The purpose of this paper is to describe a thoroughly dry lithography using plasma polymerization and plasma etching. The new lithography is named vacuum lithography because all processes are performed at reduced pressures. Resist films were formed in bell-jar-type and argon-flow-type reactors. The controllability of plasma polymerization is discussed with respect to the type of reactor and gas mixture. A pattern was delineated in the resist using an electron beam, and it was developed by plasma etching with a mixture of argon and oxygen. It was found that the quality of the plasma-polymerized resist depends strongly on the polymer structure and on the plasma etching conditions. In this experiment, the recorded values of sensitivity and value of plasma-polymerized methyl methacrylate were 700 µC/cm2 and 1, respectively. |
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Keywords: | Vacuum lithography electron-beam resist plasma-polymerized methyl methacrylate (PPMMA) plasma etching |
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