无箔二极管电流电压关系研究

本文给出了无箔二极管物理特性的数值模拟研究结果。研究得到了二极管电流与二极管结构参数、二极管电压以及外加磁场强度等参数的变化关系特性，并且应用这些关系特性得到了在外加磁场强度足够大情况下二极管电流的近似表达为Ib=(7.5/x)(x+(0.81-x)/(1+0.7Ld2/δr))(r2/3-1)3/2，其中Ld为阴阳极间距；Rc为阴极发射端面的外半径；Rp为漂移管管壁半径；x=ln(Rp/Rc)，δr =Rp-Rc。这一表达式在大量二极管结构参数和二极管电压参数情况下与数值模拟结果在10％误差范围内相一致，能够比较准确的表达无箔二极管的电流电压关系。

I-V characteristics of foilless diodes

Some physical characteristics of foiless diodes are obtained and analyzed by numerical simulations. Relations between diode current and configuration parameters, diode voltage and external magnetic field are investigated. Employing these relations and assuming that the external magnetic field is intense enough, the diode current can be approximately written as Ib=(7.5/x)(x+(0.81-x)/(1+0.7Ld2/δr))(r2/3-1)3/2, in which is the A-K gap, the outer radius of cathode, and the radius of drifting tube;x=ln(Rp/Rc)，δr =Rp-Rc , . This expression is comparatively accurate for with different configuration parameters and voltages, results obtained from this expression are consistent with that of numerical simulations within an error of 10%.