| 光刻机系统中193nm薄膜的研究进展 |
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| 引用本文： | 尚淑珍,易葵,邵建达,范正修.光刻机系统中193nm薄膜的研究进展[J].激光与光电子学进展,2006,43(1):11-14. |
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| 作者姓名： | 尚淑珍 易葵 邵建达 范正修 |
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| 作者单位： | 中国科学院上海光学精密机械研究所,上海,2018002;中国科学院研究生院,北京,100039;中国科学院上海光学精密机械研究所,上海,2018002 |
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| 摘 要： | 193nm的ArF准分子激光光刻可将特征线宽推进到0．10μm。重点介绍了193nm薄膜的研究进展及影响薄膜性能的主要因素，并对具体的研究方向进行了总结。
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| 关 键 词： | 光刻 193nm 光学薄膜 |
| 收稿时间： | 2005-06-13 |
| 修稿时间： | 2005-06-132005-07-01 |
Development of 193nm Optical Coatings for Photolithography |
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| SHANG Shuzhen,YI Kui,SHAO Jianda,FAN Zhengxiu.Development of 193nm Optical Coatings for Photolithography[J].Laser & Optoelectronics Progress,2006,43(1):11-14. |
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| Authors: | SHANG Shuzhen YI Kui SHAO Jianda FAN Zhengxiu |
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| Institution: | 1. Shanghai Institute of Optics and Fine Mechanics, The Chinese Academy of Sciences, Shanghai 201800 ;2 .Graduate school of the Chinese Academy of Sciences, Beijing 100039 |
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| Abstract: | For device dimensions down to 0.10μm, lithography using 193nm exposure wavelength based on ArF excimer laser as light source is forecasted. The research progress for 193nm optical coatings, the main factors to affect the properties of the coatings and the particular investigating direction are presented. |
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| Keywords: | 193nm |
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