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Angular dependence of tunneling magnetoresistance in La0.7Sr0.3MnO3 step-edge junctions
Authors:L.M. Wang  Jyh-Yi Lee  H.C. Yang  J.C. Chen  Hsiang-Lin Liu  Kun-Sheng Lu  Lance Horng  H.E. Horng
Affiliation:1. Department of Electrical Engineering, Da-Yeh University, Da-Tsuen, Shan-Jiau Road 112, Chang-Hwa 515, Taiwan;2. Department of Physics, National Taiwan University, Taipei 106, Taiwan;3. Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan;4. Department of Physics, National Changhua University of Education, Changhua 500, Taiwan;5. Department of Physics/Institute of Electro-optical Science and Technology, National Taiwan Normal University, Taipei 116, Taiwan
Abstract:La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been fabricated on step-edge (0 0 1) SrTiO3 substrates with a high step-edge angle. In the measurement of magnetoresistance (MR) ratio versus external magnetic field H, butterfly-like MR curves are clearly observed. The MR(H  ) curves vary with θθ, the angle between the applied magnetic field and the current direction in the substrate plane, showing anisotropic MR properties. A much broader MR(H) response is observed for the configuration of H perpendicular to the substrate plane. Additionally, the maxima-MR field Hp almost coincides with the coercive field Hc for θ<60°θ<60° but obeys a different form from Hc(θ)Hc(θ). The high-field junction resistance shows an intrinsic sin2θsin2θ angular dependence, while the low-field resistance shows an extrinsic cos(4θ)cos(4θ) angular dependence. The distinctive features are mainly due to the induced magnetization anisotropy in the artificial steps of grain boundaries.
Keywords:73.40.Gk   75.70.&minus  i   85.70.Kh
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