Nanoparticle composites: FePt with wide-band-gap semiconductor |
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Authors: | Meihua Lu H. Gong T. Song Jian-Ping Wang Hong-Wei Zhang T.J. Zhou |
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Affiliation: | 1. Data Storage Institute, 5 Engineering Drive 1, Singapore 117608, Singapore;2. Department of Materials Science and Engineering, National University of Singapore, Singapore;3. MINT and Electrical and Computer Engineering Department, University of Minnesota, Minneapolis, MN 55455, USA;4. Nanyang Institute of Technology, Nanyang 473061, P.R. China |
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Abstract: | We present a simple way to synthesize FePt and ZnO (wide-band-gap semiconductor) nanoparticle composites. The FePt nanoparticles were fabricated using the method reported by Sun et al. By controlling the heating rate, 3 nm FePt nanoparticles were synthesized. Well-dispersed FePt and ZnO nanoparticle composites were prepared by further adding zinc acetate and oleyl amine into the 3 nm FePt nanoparticle dispersion. By controlling the molar ratio of the FePt and zinc acetate, FePt and ZnO nanoparticle composites with different FePt particle fractions were obtained. The intensity of photo luminescence spectra of the nanoparticle composites increases very much with decreasing FePt particle fraction, whereas the peak position shifts a little. After annealing at 550 °C for half an hour, the nanoparticle composites become magnetically hard or semi-hard with coercivity much dependent on the FePt particle volume fraction. The coercivity of the composites increases with annealing temperature. The composites hold the promise of applications in new generation recording and/or optical devices. |
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Keywords: | Nanoparticle composite FePt Wide-band-gap semiconductor |
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