Magnetic tunnel junctions comprising amorphous NiFeSiB and CoFeSiB free layers |
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Authors: | Young Keun Kim |
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Institution: | Department of Materials Science and Engineering, Korea University, Seoul 136-713, Republic of Korea |
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Abstract: | Magnetic and magneto-transport behaviors of magnetic tunnel junctions (MTJs) incorporating newly developed amorphous NiFeSiB and CoFeSiB as free layers were investigated. Both experimental and theoretical approaches were carried out to understand the details of switching characteristics. The MTJs with traditional free layer materials such as NiFe and CoFe were also fabricated and compared. The studied amorphous ferromagnets appeared beneficial for reducing switching fields without loosing tunnelling magnetoresistive outputs. Further layer thickness, composition, and MTJ structure optimization are expected. |
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Keywords: | 85 75 Dd 75 20 Hr 75 60 Kw |
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