Effect of GePt buffer layer on magnetic properties and microstructure of FePt films |
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| Authors: | J.L. Tsai C.J. Hsu Y.H. Pai F.S. Shieu C.W. Hsu S.K. Chen W.C. Chang |
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| Affiliation: | 1. Department of Materials Engineering, National Chung Hsing University, 250 Kuo Kuang Rd., Taichung 402, Taiwan;2. Department of Material Science and Engineering, Feng Chia University, Taichung, Taiwan;3. Department of Physics, National Chung Cheng University, Chia-Yi, Taiwan |
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| Abstract: | We have explored the interlayer diffusion effect of Ge/FePt, GePt/FePt bilayer on the formation of ordered L10 FePt phase. In Ge/FePt bilayer, the Ge3Pt2 compound was formed during post annealing at 400oC for 1.0 h. Diffusion between Ge and FePt layer suppres the formation of ordered L10 FePt phase. With Ge2Pt3 underlayer, the FePt film was ordered at 400 °C and the in-plane coercivity was 9.3 kOe. The ordering temperature was reduced about 50 °C compared to the single layer FePt film. |
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| Keywords: | 75.50.Ss 07.55.Db |
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