Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors |
| |
| Authors: | H.L. Li H.T. Lin Y.H. Wu T. Liu Z.L. Zhao G.C. Han T.C. Chong |
| |
| Affiliation: | 1. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore;2. Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608, Singapore |
| |
| Abstract: | We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature. |
| |
| Keywords: | Amorphous diluted magnetic semiconductors (DMSs) Delta-doping Ferromagnetic ordering Antiferromagentic coupling |
| 本文献已被 ScienceDirect 等数据库收录！ |
