Effects of Cr underlayer and Pt buffer layer on the interfacial structure and magnetic characteristics of sputtered FePt films |
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Authors: | An-Cheng Sun Jen-Hwa Hsu H.L. Huang P.C. Kuo |
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Affiliation: | 1. Center for Nanostorage Research, National Taiwan University, Taipei 106, Taiwan;2. Department of Physics, National Taiwan University, Taipei 106, Taiwan;3. Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan |
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Abstract: | This work develops a new method for growing L10 FePt(0 0 1) thin film on a Pt/Cr bilayer using an amorphous glass substrate. Semi-coherent epitaxial growth was initiated from the Cr(0 0 2) underlayer, continued through the Pt(0 0 1) buffer layer, and extended into the L10 FePt(0 0 1) magnetic layer. The squareness of the L10 FePt film in the presence of both a Cr underlayer and a Pt buffer layer was close to unity as the magnetic field was applied perpendicular to the film plane. The single L10 FePt(1 1 1) orientation was observed in the absence of a Cr underlayer. When a Cr underlayer is inserted, the preferred orientation switched from L10 FePt(1 1 1) to L10 FePt(0 0 1) and the magnetic film exhibited perpendicular magnetic anisotropy. However, in the absence of an Pt intermediate layer, the Cr atoms diffused directly into the FePt magnetic layer and prevented the formation of the L10 FePt(0 0 1) preferred orientation. When a Pt buffer layer was introduced between the FePt and Cr underlayer, the L10 FePt(0 0 1) peak appeared. The thickness of the Pt buffer layer also substantially affected the magnetic properties and atomic arrangement at the FePt/Pt and Pt/Cr interfaces. |
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Keywords: | 81.15.C 75.60.G 75.70.K |
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