Ferromagnetism in Mn-doped GaAs layers: Effects of laser annealing |
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Authors: | YuA Danilov VP Lesnikov YuN Nozdrin VV Podolskii MV Sapozhnikov OV Vikhrova BN Zvonkov |
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Institution: | 1. Physico-Technical Research Institute, University of Nizhny Novgorod, Nizhny Novgorod 603950, Russian Federation;2. Institute for Physics of Microstructures, RAS, Nizhny Novgorod 603950, Russian Federation |
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Abstract: | The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements. |
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Keywords: | 81 15 Fg 75 50 Pp 72 20 My 78 20 Ls |
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