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Ferromagnetism in Mn-doped GaAs layers: Effects of laser annealing
Authors:YuA Danilov  VP Lesnikov  YuN Nozdrin  VV Podolskii  MV Sapozhnikov  OV Vikhrova  BN Zvonkov
Institution:1. Physico-Technical Research Institute, University of Nizhny Novgorod, Nizhny Novgorod 603950, Russian Federation;2. Institute for Physics of Microstructures, RAS, Nizhny Novgorod 603950, Russian Federation
Abstract:The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.
Keywords:81  15  Fg  75  50  Pp  72  20  My  78  20  Ls
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