Microfabrication and magnetoelectric properties of amorphous magnetic-tunnel-junctions with Co–Fe–B/Al–O/Co–Fe–B hardcore structure |
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Authors: | XF Han XQ Zhang ZM Zeng FF Li LX Jiang R Sharif YD Yao |
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Institution: | 1. State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100080, PR China;2. Institute of Physics, Academia Sinica, Taipei, Taiwan, ROC |
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Abstract: | Both single-barrier magnetic tunnel junctions (SBMTJs) and double-barrier magnetic tunnel junctions (DBMTJs) with an amorphous hardcore structure of Co60Fe20B20/Al–O/Co60Fe20B20 were microfabricated. A high TMR ratio of 102.2% at 4.2 K was observed in the SBMTJs after annealing at 265 °C for 1 h. High TMR ratio of 56.2%, low junction resistance-area product RS of 4.6 kΩ μm2, small coercivity HC=25 Oe, and relatively large bias-voltage-at-half-maximum TMR with the value V1/2 greater than 500 mV at room temperature (RT) had been achieved in such Co–Fe–B SBMTJs. Whereas, high TMR ratio of 60% at RT and 89% at 30 K, low junction resistance-area product RS of 7.8 kΩ μm2 at RT and 8.3 kΩ μm2 at 30 K, low coercivity HC=8.5 Oe at RT and HC=14 Oe at 30 K, and relatively large bias-voltage-at-half-maximum TMR with the value V1/2 greater than 1150 mV at RT had been achieved in the Co–Fe–B DBMTJs. Temperature dependence of the TMR ratio, resistance, and coercivity from 4.2 K to RT, and applied voltage dependence of the TMR ratio and resistance at RT for such amorphous MTJs were also investigated. |
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Keywords: | 73 40 Gk 75 70 Ak 72 10 Di 73 61 At 73 61 Ng |
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