Correlation between noise and EMI on nanometer multi-quantum well InGaN LED |
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Authors: | Han-Chang Tsai |
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Affiliation: | Department of Electronic Engineering, Cheng-Shiu University, No. 840, Cherng Ching Rd. Neau Song Township, Kaohsiung County, Taiwan 83305, ROC |
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Abstract: | This study investigates the low-frequency noise induced by electromagnetic radiation interference (EMI) in a nanometer multi-quantum well InGaN LED (NMQ LED). Theoretical models of the noise spectra and the EMI are constructed. In general, a good agreement is identified between the experimental and theoretical results. Experimental and numerical results reveal that the magnitude of the EMI-induced noise is related to the pulse height, the output load, the parasitic capacitance, and the interference amplitude. It is shown that a higher interference amplitude increases the harmonic noise. Moreover, this thesis presents a complete measurement to obtain the interference noise and signal-to-noise ratio. |
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Keywords: | Noise Harmonic wave Nanometer Multi-quantum well Ingan led Radiated power Conducting wire EMI SNR |
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