The energy balance and branching ratios associated with the chemiluminescent reaction Si(3P) + N2O(1Σ) → SiO*(a3Σ+, b3Π, A1Π) + N2(υ″ ⩾ 5) — possible formation of vibrationally excited N2

Silicon atoms react under single collision conditions with N₂O to yield chemiluminescent emission corresponding to the SiO a³Σ⁺?X¹Σ⁺ and b³Π?X¹Σ⁺ intercombination systems and the A¹Π?X¹Σ⁺ band system. A most striking feature of the SiN₂O reaction is the energy balance associated with the formation of SiO product molecules in the A¹Π and b³Π states. A significant energy discrepancy ( = 10000 cm^? = 1.24 eV) is found between the available energy to populate the highest energetically accessible excited-state quantum levels and the highest quantum level from which emission is observed. It is suggested that this discrepancy may result from the formation of vibrationally excited N₂ in a concerted fast SiN₂O reactive encounter. Emission from the SiO a³Σ⁺ (A¹Π) and b³Π(A¹Π, E¹Σ₀⁺) triplet-state manifold results primarily from intensity borrowing involving the indicated singlet states. Perturbation calculations indicate the magnitude of the mixing between the b³Π, A¹Π and E¹Σ₀⁺ states ranges between 0.5 and 2%. On the basis of these calculations, the branching ratio (excited triplet)/(excited singlet) is found to be well in excess of 500. An approximate vibrational population distribution is deduced for those molecules formed in the b³Π state. The present studies are correlated with those of previous workers in order to provide an explanation for diverse relaxation effects as well as observed changes in the ratio of a³Σ⁺ to b³Π emission as a function of pressure and experimental environment. Some of these effects are attributable to a strong coupling between the a³Σ⁺ and b³Π state. Based on the current results, there appears to be little correlation between either (1) the branching ratio for excited state formation or (2) the total absolute cross section for excited-state formation and (3) the measured quantum yield for the SiN₂O reaction. Implications for chemical laser development are considered.