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Positron annihilation study of defects and microheterogeneity of chalcogenide glassy semiconductors — chemical bonding in ge—se and some AVBVI systems |
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| Authors: | V P Shantarovich I B Kevdina B V Kobrin V S Minaev |
| Abstract: | Recently developed ideas on the mechanisms of positron annihilation in chalcogenide glassy semiconductors are used in studying chemical bonding of the AVBVI structures (A = As, B = S, Se, Te) and Ge Se. |
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