X-ray diffraction studies of interdiffusion in InAs—GaAs powder blends

Interdiffusion in the pseudobinary system In_xGa_1−xAs is investigated by means of X-ray diffractometry of annealed powder blends. The interpretation of the experimental results by means both of the concentric spheres and concentric cubes model yields for In_0.43Ga_0.57As an activation energy of (5.39 ± 0.11) eV. This value shows that the diffusion mechanism could be a vacancy one as in the pure compounds. According to the lower atomic radius the Ga atoms within the temperature interval of 550–625 °C diffuse more easily than the In atoms.