| Abstract: | A simultaneous simulation of the growth process in the A(K)DP-type anion-doped crystal and growing of this crystal from aqueous solution under controlled conditions has made it possible to analyse the mechanism of impurity influence on the growth rate of various crystal faces. The anisotropy of the face growth rate and the capture coefficient of various impurities by the faces have been determined by the difference in dissolution heats and in sizes of replacing ions. The increase in energy change, when the ion in a solution enters a crystal, causes an increase in the growth rate and the capture of impurities by the face with the largest change. Breaking of one of the joined faces and increased growth of another one resulted in forming of the new faces, i.e. in changing crystal morphology. |
