|
|||||
|
|
X-ray topographic study of GaSb substrates for epitaxial layer growth |
|
| Authors: | I. S. Vassilev L. D. Pramatarova M. B. Baeva |
| Abstract: | The depth of the layer damaged by silicing of GaSb ingots has been determined by X-ray topography. The changes in the defect structure of substrates after successive etching to different depths by Br2/CH3OH and 1 HF:3 NNO3:1 CH3COOH have been studied. The effect of heat treatment carried out under conditions similar to the epitaxial process of substrates with completely removed damaged layer has been investigated. |
| Keywords: | |